unisonic technologies co., ltd 11n50 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-462.d 11 a , 500v n-channel power mosfet ? description the utc 11n50 is an n-channel enhancement mode power mosfet. it uses utc advanced pla nar stripe, dmos technology to provide customers perfect switch ing performance, minimal on-state resistance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 11n50 is universally applied in electronic lamp ballasts based on half bridge topology, high efficiency switched mode power supplies, active power factor correction, etc. ? features * r ds(on) =0.55 ? @ v gs =10v * fast switching * with 100% avalanche tested ? symbol 1.gate 3.source 2.drain to-220 to-220f to-220f1 to-262 1 1 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 11n50l-ta3-t 11n50g-ta3-t to-220 g d s tube 11n50l-tf1-t 11n50g-tf1-t to-220f1 g d s tube 11n50l-tf3-t 11n50g-tf3-t to-220f g d s tube 11n50l-t2q-t 11N50G-T2Q-T to-262 g d s tube
11n50 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-462.d ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v continuous drain current t c =25c i d 11 (note 2) a t c =100c 7 (note 2) a pulsed drain current (note 3) i dm 44 (note 2) a single pulsed avalanche energy(note 4) e as 670 mj peak diode recovery dv/dt (note 5) dv/dt 4.5 v/ns power dissipation t c =25c to-220 p d 195 w to-220f1 40 to-220f 48 to-262 195 derate above 25c to-220 1.56 w/c to-220f1 0.32 to-220f 0.39 to-262 1.56 junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2 . drain current limited by maximum junction temperature 3 . repetitive rating : pulse width limit ed by maximum junction temperature 4 . l=10mh, i as =11a, v dd = 50v, r g =25 ? , starting t j =25c 5 . i sd 11a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case to-220 jc 0.64 c/w to-220f1 3.1 to-220f 2.58 to-262 0.64
11n50 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-462.d ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 500 v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.5 v/c drain-source leakage current i dss v ds =500v, v gs =0v 10 a v ds =500v, t j =125c 100 a gate-source leakage current i gss v ds =0v ,v gs =30v 100 na on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d =250a 2.0 4.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =5.5a 0.48 0.55 ? dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 1515 2055 pf output capacitance c oss 185 235 pf reverse transfer capacitance c rss 25 30 pf switching parameters total gate charge q g v ds =400v, v gs =10v, i d =11a (note 1, 2) 43 55 nc gate-source charge q gs 8 nc gate-drain charge q gd 19 nc turn-on delay time t d ( on ) v dd =250v, i d =11a, r g =3 ? (note 1, 2) 24 57 ns turn-on rise time t r 70 150 ns turn-off delay time t d ( off ) 120 250 ns turn-off fall time t f 75 160 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 11 a maximum body-diode pulsed current i sm 44 a drain-source diode forward voltage v sd i s =11a, v gs =0v 1.4 v body diode reverse recovery time t r r v gs =0v, i s =11a, di f /dt=100a/ s (note 1) 90 ns body diode reverse recovery charge q rr 1.5 c note: 1. pulse test : pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
11n50 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-462.d ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
11n50 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-462.d ? test circuits and waveforms (cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
11n50 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-462.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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